| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| AM29DL323DB90WDIN AM29DL323DB120WDI AM29DL323DB120 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRF450 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTX2N7228 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A IRFE430 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6802U with Standard Packaging
12V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRL7NJ3802 with Standard Packaging
60V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY044CM with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A IRFM140 with Standard Packaging
-20V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRL5NJ7404 with Standard Packaging
150V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A IRF5M3415 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A JANTXV2N7222U with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTXV2N7218 with Standard Packaging
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A IRFM260 with Standard Packaging
AME270461; A AME270461 with Standard Packaging x8/x16闪存EEPROM
AFC461; Qualified Part Number similar to AFC461 x8/x16闪存EEPROM
AME28461; A AME28461 with Standard Packaging x8/x16闪存EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A JANTXV2N6764 with Standard Packaging x8/x16闪存EEPROM
IR2113L6; A IR2113L6 with Standard Packaging x8/x16闪存EEPROM
-55V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A IRF5M4905 with Standard Packaging x8/x16闪存EEPROM
|
Spansion, Inc.
|
| AM29F400AB-150FEB AM29F400AT-150FE AM29F400AT-150S |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package; A IRF3205ZS with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB3307 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010ZL with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010Z with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3707 with Standard Packaging
x8/x16 Flash EEPROM
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF1407 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU120N with Standard Packaging x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
|
| FDG410NZ |
2200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Single N-Channel PowerTrench垄莽 MOSFET 20 V, 2.2 A, 70 m楼?
Single N-Channel PowerTrench? MOSFET 20 V, 2.2 A, 70 mΩ
|
Fairchild Semiconductor Corporation
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| X2114TTT X2111TTT X2112PTT X2118PFD X2118PET X2111 |
Analog IC
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3709Z with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7403 with Lead Free Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ44EPBF with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3518 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; A IRFP1405 with Standard Packaging 模拟IC
|
NXP Semiconductors N.V.
|
| NTMFS4120N NTMFS4120NT1G NTMFS4120NT3G |
Power MOSFET 30 V, 31 A, Single N-Channel SO-8 Flat Lead ; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead
|
ON Semiconductor
|
| IRHLF740Z4 IRHLF770Z4 IRHLF780Z4 IRHLF730Z4 IRHLF6 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) 抗辐射逻辑电平功率MOSFET通孔（到39
From old datasheet system
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFZ34NL IRFZ34NS IRFZ34NSTRL IRFZ34NSTRR |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier, Corp.
|
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
